| 摘要 |
<p>A semiconductor integrated circuit device is fabricated on a lightly doped n-type silicon substrate (11), and p-type wells (13/ 14) are formed in the silicon substrate, wherein a heavily doped n-type channel stopper (21) is formed in a surface portion (20) between the p-type wells for restricting a parasitic channel between the p-type wells, and the surface portion is doped at a predetermined impurity concentration larger than a remaining portion of the silicon substrate and smaller than the channel stopper so that a p-n junction hardly takes place between the inverted surface portion and the channel stopper. <IMAGE></p> |
