STRUCTURE OF FIELD-EFFECT TYPE SEMICONDUCTOR ELEMENT AND MANUFACTURE THEREOF

摘要

PURPOSE: To minimize gate-drain capacitance by making an insulated film in an area where a gate and a drain are overlapped thicker than an insulating layer in a channel area. CONSTITUTION: A first conductive layer 23 of a first pattern making the first gate oxide film 17 of a first thickness an intermediate layer is formed at the upper part of a channel area. There is a gate 35 consisting of the second conductive layer 33 of a second pattern which is separated from the first conductive layer by the pad oxide film 27b of a second thickness at the side face of the lower part conductive layer 19 of the layer 23 while being in contact with the side face of the upper part conductive layer 21 of the layer 23 and separated from a substrate 15 by the second gate oxide film 43 of a third thickness obtained by fitting the film 17 and the film 27b. Thereby, the insulated film in the area where a gate and a drain are overlapped is formed to be thicker than the insulating film formed at the upper part in the channel area.