发明名称 |
MASK FOR X-RAY EXPOSURE AND MANUFACTURE THEREOF |
摘要 |
PURPOSE:To obtain a reflection-type X-ray mask with a high reflection factor and a reduced exposure time by eliminating a problem of reduction in reflection factor due to roughening on a reflecting surface of a multilayer film by a conventional method for manufacturing a reflection-type X-ray mask. CONSTITUTION:A focusing energy beam is emitted to a multilayer film 2 of a space portion of a mask pattern, thus machining to a state where no X-rays are reflected, in a reflection-type mask for X-ray exposure. |
申请公布号 |
JPH04346214(A) |
申请公布日期 |
1992.12.02 |
申请号 |
JP19910146587 |
申请日期 |
1991.05.23 |
申请人 |
NIKON CORP |
发明人 |
NAKAMURA HIROSHI;OTANI MASAYUKI;OSHINO TETSUYA |
分类号 |
G03F1/22;G03F1/24;H01L21/027;H05G1/02 |
主分类号 |
G03F1/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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