发明名称 MASK FOR X-RAY EXPOSURE AND MANUFACTURE THEREOF
摘要 PURPOSE:To obtain a reflection-type X-ray mask with a high reflection factor and a reduced exposure time by eliminating a problem of reduction in reflection factor due to roughening on a reflecting surface of a multilayer film by a conventional method for manufacturing a reflection-type X-ray mask. CONSTITUTION:A focusing energy beam is emitted to a multilayer film 2 of a space portion of a mask pattern, thus machining to a state where no X-rays are reflected, in a reflection-type mask for X-ray exposure.
申请公布号 JPH04346214(A) 申请公布日期 1992.12.02
申请号 JP19910146587 申请日期 1991.05.23
申请人 NIKON CORP 发明人 NAKAMURA HIROSHI;OTANI MASAYUKI;OSHINO TETSUYA
分类号 G03F1/22;G03F1/24;H01L21/027;H05G1/02 主分类号 G03F1/22
代理机构 代理人
主权项
地址