| 摘要 |
The circuit comprises a transistor (M3) for regulating the drain voltage of the cell (C1) to be read and an inverter (M1, M2) for driving the regulating transistor (M3), having the same drain voltage as input. It also comprises a fast precharge transistor (M6) of the bit line (Bl), that has the gate connected to the gate of the regulating transistor (M3) and the source connected to the drain of the regulating transistor (M3), so that it is quenched by the drain voltage of the regulating transistor (M3) following its rise at the end of the precharge of the bit line (Bl). <IMAGE>
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