Semiconductor integrated circuit device with guardring regions to prevent the formation of an MOS diode

摘要

This invention relates to a semiconductor integrated circuit device wherein guardring regions are formed between a first element region and a second element region so as to surround the first element region, wherein gate electrodes are provided to cross the guardring regions, wherein the guardring regions are continuously formed even directly below the gate electrodes, and wherein an insulator film directly below the gate electrodes is relatively thick.