| 摘要 |
PURPOSE:To check the drawing of the pattern data on the phase shift mask. CONSTITUTION:The pattern data on the phase shift mask is laid out divisionally in a real pattern data layer, an auxiliary pattern data layer, and a phase shift pattern data layer (101). Then the drawing of only data on the real pattern of the real pattern data layer is checked and corrected (102). Data on a pattern assumed to be transferred onto a semiconductor wafer is generated from data on the composite pattern of data on the correct real pattern obtained by the drawing check and correction, data on the auxiliary pattern, and data on the phase shift pattern (103). Then, the data on the expected pattern and the data on the real pattern are compared and the drawing of the data on the auxiliary pattern and phase shift pattern is checked (104). |
