| 摘要 |
PURPOSE:To obtain a resist film-exposing method with which a highly precise resist pattern can be formed and also the exposing method can be simplified and the exposing operation can be expedited by a method wherein the resist pattern is not subjected to the in-pattern proximity effect and the interpattern proximity effect. CONSTITUTION:A process in which a filter film 7, having a small absorption coefficient against ultraviolet rays, is formed on the resist film 6 of the material 5 to be patterned, and another process, in which the resist film 6 of an exposing regions 8a to 8c is exposed and also the filter film 7 of exposing regions 8a to 8c is converted to a filter film 7 having a large absorption coefficient against ultraviolet rays, are included in the title resist pattern forming method. Also, a process in which ultraviolet rays are made to irradiate through the intermediary of the filter film 7 and the ultraviolet rays are absorbed by the resist film 6 of non-exposure region 9a to 9d, and another process, in which the resist film 6 is developed after the filter film 7 has been removed and resist patterns 6a to 6c are formed on the exposing regions 8a to 8c, are included in the title resist pattern forming method. |
