| 摘要 |
PURPOSE:To obtain a fine connecting hole regardless of film thickness by oxidizing under a high pressure an Si substrate or a poly Si layer with an oxidation resisting film applied thereon as a mask with a specified shape. CONSTITUTION:A poly Si electrode 5 is made in an isolating SiO2 thick film and a SiO2 thin film on an Si substrate 1 and covered with an SiO2 thin film 8. An Si3N4 film 10 with a specified shape is selctively provided at a specified position and oxidized under 3 atms at about 950 deg.C with a mask 10. As the oxidation rate little affects the thickness of the SiO2 film in the high pressure oxidation, the SiO2 film 8 increase beside the area immediately below the mask 10 while the film 2 is enlarged to become a film 2a until a smooth film 16 is formed with an evenly continuous surface. Therefore, a fine electrode window can be formed thereby preventing disconnection in a wiring 18 formed. |
