| 摘要 |
PURPOSE:To prevent occurrence of a crystal defect, poor insulation and the like by conducting a complete buried contact for electrical connection between the diffusion layer, which becomes a source or a drain region, and a wiring layer. CONSTITUTION:A field oxide film 102, a silicon oxide film 103 and the first polycrystalline silicon film 104 are formed on a semiconductor substrate 101, and after impurities have been introduced into the first polycrystalline silicon film, a gate electrode 104a and a wiring layer are formed. By forming the second conductive type diffusion layer on the region other than the gate electrode and the wiring layer, a connecting diffusion layer is continuously formed on a source region, a drain region and between the source region or the drain region and the field oxide film. Out of a silicon oxide film 109, the region where the connecting diffusion layer is formed and a part of the region on the adjacent field oxide film are selectively removed, and out of the second polycrystalline film 131, the part where the connecting diffusion layer and the wiring layer are electrically connected is selectively left.
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