| 摘要 |
The formation of field oxide film for semiconductor, which is formed by oxidizing treatment after diffusing BF2 on the silicon wafer, comprises (A) raising the temperature from 700-800 deg.C to 900-1000 deg.C for 30-40 mins. under atmosphere of N2 gas (7-9 SLPM), (B) maintaining the elevated temperature for 20-30 mins. under the atmosphere of N2 gas (6-9 SLPM), (C) heat treating lattice defect for 100-130 mins. under the atmospheres of N2 gas (6-9 SLPM) and O2 gas (2-5 SLPM), (D) dry oxidizing for 8-10 mins. under the atmosphere of O2 gas (7-10 SLPM), (E) wet oxidizing for 200-400 mins. under the atmospheres of O2 gas (7-10 SLPM), H2 gas (6-15 SLPM) and N2TCA (150-300 SCCM), and (F) heat treating for 30-40 mins. under the atmosphere of N2 gas (6-9 SLPM).
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