发明名称 MDRAM P.C.P. SENSOR AMPLIFIER
摘要 In the P.C.P (PMOS latch cut-off voltage level precharge scheme) sense amplifier for decreasing the size and the interconnection line of mega DRAM, the equalizing signal is applied to the equalizing transistor (Q18) and the precharge driving transistor (Q17). The source and the drain of the equalizing transistor is connected to the bit line and the bit line, respectively. The source and the drain of the precharge driving transistor is connected to the ground and the common source of PMOS latch transistor (Q14,Q15), respectively. The cut-off voltage level of PMOS latch transistor is used in t of precharging.
申请公布号 KR920010342(B1) 申请公布日期 1992.11.27
申请号 KR19900002267 申请日期 1990.02.23
申请人 KOREA ELECTRONICS & TELECOMMUNICATIONS RESEARCH INSTITUTE 发明人 KIM, HWAN - YONG;KIM, TAE - YONG;KIM, DAE - SUN;SONG, WON - CHOL
分类号 G11C7/06;(IPC1-7):G11C7/06 主分类号 G11C7/06
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