| 摘要 |
PURPOSE:To reduce fluctuation of capacity between memory cells. CONSTITUTION:This ferroelectric memory is provided with a plurality of one- transistor one-capacitor memory cells and further provided with a source and drain areas 33 and 34 formed on a semiconductor substrate 31, control gate formed in an element area between the areas 33 and 34, and lower electrode 39 the part of which is connected to the source area 33. In addition, the memory is also provided with an upper electrode 42 which is formed so as to intersect the electrode 39, dielectric film 41 formed in the intersection of the electrodes 39 and 42, bit line 40 connected with the drain area, and word line connected with the control gate and the upper electrode and bit line are formed simultaneously. |
