| 摘要 |
The method for improving the step coverage and reducing the processing time comprises the steps of evaporating a Ti(OC2H5)4, a Zr[(C3H7O)4 and a Pb(C2H5)4 in a constant temp. reservoirs (5)(6) and (7) at 120-150 deg.C, 200-250 deg.C and 10-20 deg.C respectively, mixing the evaporated gases by using Ar or N2 as a carrier gas, supplying O2 gas to the mixed gas at 700-850 deg.C to induce a first reaction of PZT, and inducing a second PZT reaction to form a PZT thin film. The PZT thin film is used as a capacitor for the memory device. The flow meters (1,2,3) control the film- forming rate.
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