| 摘要 |
<p>PURPOSE:To simplify a process by a method wherein the shape of an X-ray transmitting window is worked with high accuracy and the number of replacement operations of an etchant is reduced to one CONSTITUTION:An X-ray transmitting thin film 3 is formed on one face of a silicon substrate 1; an X-ray absorbing pattern 6 is formed on the X-ray transmitting thin film 3 on a side opposite to the silicon substrate 1; the silicon substrate 1 in parts, including an X-ray exposure region, in which the X-ray absorbing pattern 6 has been formed is etched and removed. Thereby, an X-ray transmitting window including the X-ray exposure region is formed. At this time, a protective film 2 with which a part other than the X-ray exposure region is covered is formed on a face opposite to the X-ray transmitting thin film 3 on the silicon substrate 1; the part, of the silicon substrate 1, which is not covered with the protective film 2 is removed [Fig. (e)] down to a halfway depth by an anisotropic etching operation; after that, its remaining depth part is removed [Fig. (f)] by an isotropic etching operation; the X-ray transmitting window including the X-ray exposure region is formed.</p> |
