| 摘要 |
PURPOSE:To improve the manufacturing yield and reliability of a semiconductor device by preventing the stripping off and deformation of a fin-like accumulating electrode in the manufacturing process of the semiconductor device. CONSTITUTION:This semiconductor device is provided with a fin-like accumulating electrode 9 which is connected with a diffusion layer 5D formed on a semiconductor substrate 1 through the openings of the first insulating films 6 and 7 formed on the substrate 1 and extended over the films 6 and 7 separately from the films 6 and 7. At the time of forming the electrode 9, a supporting body 10 which is composed of the second insulating film has a thickness reaching the rear surface of the fin-like section of the electrode 9 from the upper surfaces of the films 6 and 7 is partially left below the fin-like section of the electrode 9. |
