| 摘要 |
PURPOSE:To provide the developing method of a resist film to form a patterning mask for a film on a semiconductor substrate, and to improve the resolution of the resist film. CONSTITUTION:The method of this invention to develop a resist film and to form a resist pattern consists of the following continuous processes repeated for several time. The resist film exposed to light on a body to be patterned is first developed with an alkali developer, and then the resist film is washed and dried to remove the alkali developer depositing on the resist film. The alkali concn. of the alkali developer is maintained to such concn. (Cth) or higher corresponding to the max. of value obtd. by continuously dipping a resist film in an alkali developer of various alkali concns. |
