| 摘要 |
PURPOSE:To obtain a self-alignment type transistor in which leak current is scarcely generated between a source and a drain at a process temperature capable of using a glass substrate, by activating impurities by projecting obliquely a laser beam after impurities are implanted in a silicon thin film through an insulative thin film. CONSTITUTION:After a silicon layer 103 is stuck and formed on an an insulative substrate 101, and the silicon layer 103 is irradiated with an energetic beam 106, the silicon layer 103 is patterned. An insulative thin film 104 is stuck and formed so as to cover the silicon layer 103. A gate electrode 105 is stuck and formed on the insulative thin film 104. After impurities are implanted in the silicon thin film 103 through the insulative thin film 104, a laser beam 109 is obliquely projected, thereby activating the impurities. For example, after the impurities are implanted in the gate electrode 105 in a self-alignment manner, the laser beam 109 is projected so as to activate impurities also in a region 108 under the gate electrode 105.
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