| 摘要 |
PURPOSE:To obtain an amorphous silicon film which is dense, whose hydrogen content is small, whose photoconductivity is high and whose optical deterioration is small. CONSTITUTION:The following are repeated alternately: a first process wherein a film-forming substrate is heated to and held at 150 to 300 deg.C, a raw-material gas composed of a silane-based gas and of hydrogen gas and/or heavy hydrogen gas is pyrolyzed near said film-forming substrate and a hydrogenated amorphous silicon thin film is deposited; and a second process wherein the film-forming substrate is exposed to atomic hydrogen and/or atomic heavy hydrogen which are produced by using a means different from that to pyrolyze the raw-material gas while the raw-material gas is being pyrolyzed. |
