| 摘要 |
<p>PURPOSE:To realize the large-area active matrix display device by eliminating the deficient writing of liquid crystal due to the delay of a scanning line signal. CONSTITUTION:A photoconductive film 203 is sandwiched between the gate of a thin film transistor(TFT) 205 and a scanning line 204 and a photoconductive layer 201 is provided nearby a photoconductive material; and laser light LZ is propagated in the photoconductive layer 201 to irradiate the photoconductive material from the photoconductive layer 201 and thus the conductivity of the photoconductive material is varied. This variation is utilized to apply a voltage to the gate, and the TFT 205 is selected or not selected. Consequently, the deficient writing due to the delay of the scanning line of a conventional active matrix liquid crystal display device is eliminated to perform liquid crystal writing at a high speed.</p> |
