| 摘要 |
PURPOSE:To improve the cross-sectional form of the resist pattern high in resolution. CONSTITUTION:The thin resist film 2 formed on the substrate 1 to be processed is developed only on the surface part by the developing conditions different from those on the area other than the surface part, and after the hardly- solubilized layer 3 formed on the surface part of the layer 2 has been developed, normal development is carried out by the usual developing conditions, thus permitting the resist pattern 8 of a desired cross-sectional form to be obtained. When alkali is used for the development, the surface part is developed with a developing solution of higher concentration, and then, it is developed with a developing solution of usual concentration. |
