发明名称 |
HALBLEITERSPEICHERVORRICHTUNG MIT REDUNDANZ |
摘要 |
A semiconductor memory device, with redundancy device, prevents access time of a row address from being delayed in a normal operation mode. By using a mode detect signal generated by detecting whether or not the memory device will be repaired, the row address is directly accessed without passing through a delay circuit in the normal operation mode, while the access of the row address is delayed in the redundant operation mode. To this end, the device comprises a detecting circuit for generating the mode detect signal MD in dependence upon turning on/off of a fuse 116, a first transfer path 201 transferring a buffered row address without delay, a second transfer path 202 delaying the buffered row address through a delay circuit 130, and a path select circuit 120 selecting either the first transfer path 201 or the second transfer path 202 in dependence upon the mode detect signal MD, to transfer a signal of a selected path to a boost clock generator. <IMAGE> |
申请公布号 |
DE4124572(A1) |
申请公布日期 |
1992.11.26 |
申请号 |
DE19914124572 |
申请日期 |
1991.07.24 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD., SUWON, KR |
发明人 |
JANG, HYUN-SOON, SEOUL/SOUL, KR;LEE, KYU-CHAN, KYOUNGGI, KR |
分类号 |
G11C29/00;G11C29/04 |
主分类号 |
G11C29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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