发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To contrive to reduce the area of a bonding pad to improve the consistency of a compression bonding ball with the bonding pad by specifying the thickness of the edge of a tip being compression-bonded to the bonding pad. CONSTITUTION:A compression bonding ball 15 is wire-bonded to a bonding pad by an ultrasonic thermo-compression bonding system. The material of the bonding pad is aluminum with 1% Si and 0.5% Cu added thereto and that of a metal small-gage wire 11 is gold. The tip of the metal small-gage wire 11 is formed into a compression bonding ball 15 and the thickness of the edge of the compression bonding ball 15 is specified as 10mum and less. Also, the diameter D of the compression bonding ball. 15 is specified as 90mum and less. When the thickness of the edge diminishes, an ultrasonic amplitude is effectively transmitted to the interface between the formed ball and bonding pad, a shear fracture stress increases, and the junction of the compression bonding ball and bonding pad reaches the shear fracture stress, which the junction need to withstand, or more.
申请公布号 JPH04337645(A) 申请公布日期 1992.11.25
申请号 JP19910110021 申请日期 1991.05.15
申请人 MITSUBISHI ELECTRIC CORP 发明人 YAMAMURA KEN;TSUMURA KIYOAKI
分类号 H01L21/603;H01L21/60 主分类号 H01L21/603
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