METHOD OF DEPOSITING INTERCONNECTED METAL BY USING LOW-TEMPERATURE ALLOY PROCESS

摘要

PURPOSE: To provide a method for filling a metal of a low resistivity at a temperature not more than 400 deg.C into a via of a high aspect ratio in a VLSI mutual connection structure. CONSTITUTION: The low fusing-point alloy of a desirable low-resistance rate metal and an alloy element is deposited in a via 32 of high aspect ratio and is formed up to a surface layer 24. The deposited alloy is diffused into the surface layer 24, by refining it by a low-temperature oxidation process at that place. Then, a metallic plug 32 of the low resistivity rate is left in the via 32 in the mutual connecting structure by removing the surface layer.