| 摘要 |
PURPOSE:To provide a method for manufacturing a resonator of a semiconductor laser monolithically and with a quality exceeding a normal cleavage plane by eliminating damage and contamination due to dry etching. CONSTITUTION:After performing mirror etching to multilayer structures 101-105 of a semiconductor crystal, a dielectric 106 such as aluminum is deposited on an etching end face by EB, etc., vacuum transfer is performed to an etching chamber while keeping a high vacuum, and then a mirror and an area close to a boundary of the dielectric are directly etched by a focusing ion beam etching. A selective regrowth layer 107 is allowed to be regrown only on this selective etching surface by the MBE method, etc., an etching mask is eliminated and the dielectric 106 is eliminated when needed, and finally p electrode 108 and n electrode 109 are formed on front and rear surfaces of the wafer, respectively. |
