METHOD OF FABRICATING SEMICONDUCTOR ELEMENT HAVING LIGHTLY DOPED DRAIN (LDD) WITHOUT USING SIDEWALLS,申请号US19920820076-传众专利搜索

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发明名称	METHOD OF FABRICATING SEMICONDUCTOR ELEMENT HAVING LIGHTLY DOPED DRAIN (LDD) WITHOUT USING SIDEWALLS
摘要
申请公布号	US5166087(A)	申请公布日期	1992.11.24
申请号	US19920820076	申请日期	1992.01.13
申请人	SHARP KABUSHIKI KAISHA	发明人	KAKIMOTO, SEIZO;IGUCHI, KATSUJI;AHN, SUNG T.
分类号	H01L21/265;H01L21/336	主分类号	H01L21/265
代理机构		代理人
主权项
地址

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