发明名称 |
Silicided structures having openings therein |
摘要 |
Preferred embodiments include silicon complementary MOSFETs with titanium silicided junctions (38, 58) and direct contacts of aluminum metallization (61, 62) to the p junctions (58) which avoids the high contact resistance of the silicide (60) to p silicon (58). Preferred embodiments also include silicided polysilicon lines without corresponding silicided MOSFET junctions.
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申请公布号 |
US5166770(A) |
申请公布日期 |
1992.11.24 |
申请号 |
US19870038394 |
申请日期 |
1987.04.15 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
TANG, THOMAS E.;WEI, CHE-CHIA;CHEN, CHENG-ENG D. |
分类号 |
H01L21/285;H01L21/8238;H01L23/532;H01L27/092;H01L29/78 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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