| 摘要 |
A solid-state imaging device has a plurality of photoelectric conversion elements, a plurality of first vertical shift registers, a plurality of slice circuits, a plurality of second vertical shift registers, a plurality of charge cumulating media, a read circuit, and a horizontal shift register. The photoelectric conversion elements are arranged in a matrix, and generate charges in accordance with an irradiated light amount. The first vertical shift registers are coupled to the photoelectric conversion elements, and transfer the charges read from the photoelectric conversion elements. The slice circuits are connected to output terminals of the first vertical shift registers, cut excessive charges exceeding a preset slice level from the charges input from the first vertical shift registers, and output effective charges. The second vertical shift registers are connected to output terminals of the slice circuits, have charge storage sections corresponding in number to the photoelectric conversion elements connected to the first vertical shift registers, and transfer the charges output from the slice circuits. The charge adding media are coupled to the charge storage section of the second vertical shift registers, and cumulate the charges from the charge storage sections a plurality of times. The read circuit supplies a read signal at a predetermined timing to the charge storage section. The horizontal shift register receives a sum obtained by the charge adding media, and transfers the sum.
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