| 摘要 |
PURPOSE:To realize fabrication of a capacitor having multilayer fin structure through reduced number of steps with high throughput and high yield by continuously implanting impurity ions into a film comprising a plurality of alternately laminated semiconductor films or silicide films of high melting point and insulating films. CONSTITUTION:A film 4 comprising a plurality of alternately laminated semiconductor films or silicide films 2 having high melting point and insulating films is formed on an insulating film 1. Impurity ions 5 having a plurality of implantation energy E are then implanted, with predetermined dosages, into the laminate film 4. At that time, acceleration voltage is increased toward the lower layer of the semiconductor film or the high melting point silicide film 2 and the ions are implanted upto the depth of the semiconductor film or the high melting point silicide film. Ion implantation is carried out continuously while increasing the dosage gradually. Consequently, only one step is required resulting in improvement of throughput. |
