| 摘要 |
PURPOSE: To provide the manufacture direction/constitution body of a local mutual connecting body for an integrated circuit device, which has reliability and a low resistant value, through the use of a well-known processing technology. CONSTITUTION: A local mutual connecting body is provided in a polycrystalline silicon layer 34. Openings to lower conductive regions 18 and 28 is formed through an insulating layer 32 after the local mutual connector body conductor has been provided. A thin extra polycrystalline silicon layer is adhered and formed on the device, it is etched back, and polycrystalline silicon sidewalls 44 and 46 are formed. The walls connect the polycrystalline silicon local mutual connecting conductor to a conductive region existing at a lower part. Fireproof metal silicide is formed on the conductive area, a polycrystalline silicon sidewall element and the polycrystalline local mutual connector conductor, which exist at the exposed lower sides, by using standard silicide-making technology. Thus, connection which is completely made into silicide is obtained between feature parts that are connected by the local mutual connecting conductor. |
