| 摘要 |
A method and apparatus are disclosed for burning-in semiconductor devices. The method includes the steps of: (1) heating the surface of the semiconductor device; (2) cooling the leads of the semiconductor device package so as to maintain the temperature of the outer portions of the leads at, near, or below room temperature; and optionally (3) causing circuits on the semiconductor device to operate electrically while it is being heated. An apparatus for implementing the aforementioned method is also disclosed. In a first embodiment, the apparatus comprises a base plate for heating the surface of the semiconductor device, a cooling plate for cooling the leads of the semiconductor device package, and optionally an electrical testing device for causing the semiconductor device to operate electrically during the heating process. In a second embodiment, the apparatus comprises the same elements as the first embodiment except that the cooling plate is replaced by a heat sink having a plurality of heat dissipating fins. The present method and apparatus eliminates the need for the bulky and expensive ovens previously used for burn-in.
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