| 摘要 |
<p>PURPOSE:To provide a method for manufacturing a semiconductor device, in which a trouble is not applied to a dicing step of a semiconductor wafer in which a conductive film is formed on its rear surface. CONSTITUTION:A step of forming a conductive pattern 6 in which a plurality of openings G for not isolating chip regions of a semiconductor wafer 5 are arranged on a scribing line, on a rear surface of the wafer 5, a step of plating the rear surface of the wafer 5 by applying a current through the pattern 6, and a step of dividing the plated wafer 5 along the scribing line from the surface, are provided.</p> |
