| 摘要 |
PURPOSE:To provide the formation method, of an alignment mark, which reduces the number of alignment operations, which enhances the accuracy of the alignment operations and which can make the integration of an SOI device high in the SOI device. CONSTITUTION:A contact hole 8a for alignment use and a contact hole 8b for rear electrode use are formed simultaneously in a field region and an element region on a silicon substrate; a conductor pattern 3a and a rear electrode 3b are formed individually; a silicon layer is ground and removed from the rear of the substrate 1; the face of the conductor pattern and the pattern of the contact hole for alignment use are revealed; and the pattern for the latter is constituted as an alignment mark for surface electrode formation use. |
