发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To operate a semiconductor device at high frequency by decreasing the internal inductance. CONSTITUTION:Linear parts 4a, 5a, penetrating through the casings of collector electrode 4 and emitter electrode 5, are brought into tight contact with each other through an insulating board 11. External parts of both electrodes are extended in the opposite directions along the surface of the casing and applied with an insulating cover 12. Magnetic fields, induced by the currents flowing through the closely arranged electrodes, substantially cancel each other. Consequently, internal inductance of semiconductor device can be decreased while keeping insulation between the electrodes.
申请公布号 JPH04336454(A) 申请公布日期 1992.11.24
申请号 JP19910107907 申请日期 1991.05.14
申请人 MITSUBISHI ELECTRIC CORP 发明人 KANAZAWA KENICHI
分类号 H01L23/04;H01L23/48;H01L25/07;H01L25/18 主分类号 H01L23/04
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