发明名称 |
HYDROGEN ION MICROLITHOGRAPHY |
摘要 |
Disclosed is a hydrogen ion microlithography process for use in microelectronic fabrication and semiconductor device processing. The process comprises the steps of providing a single layer of either an amorphous silicon or hydrogenated amorphous silicon material. A pattern is recorded in a selected layer of amorphous silicon or hydrogenated amorphous silicon materials by preferentially implanting hydrogen ions therein so as to permit the selected layer to serve as a mask-resist wafer suitable for subsequent development and device fabrication. The layer is developed to provide a surface pattern therein adaptable for subsequent use in microelectronic fabrication and semiconductor device processing. |
申请公布号 |
CA1310734(C) |
申请公布日期 |
1992.11.24 |
申请号 |
CA19890603682 |
申请日期 |
1989.06.22 |
申请人 |
MIDWEST RESEARCH INSTITUTE |
发明人 |
TSUO, Y. SIMON;DEB, SATYENDRA K. |
分类号 |
G03F7/004;G03F7/20 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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