| 摘要 |
PURPOSE:To enable a wafer to be dielectrically separated into semiconductor regions which continue from the front to the rear side of the wafer to make the wafer suitable for forming vertical circuit elements in the wafer by a method wherein a buried dielectric film buried in the wafer in a pattern which extends in a lateral direction is made to serve as a relay, and partitioning dielectric films are provided between the front and the rear side of the wafer in a vertical direction. CONSTITUTION:A buried dielectric film 11 is buried in a wafer 10 in a required pattern which extends in a lateral direction in parallel with the surface 10a of the wafer 10, and partitioning dielectric films 12 and 13 are provided in a vertical direction between the front surface 10a and the rear surface 10b and the buried dielectric film 11. Semiconductor regions 15 and 16 surrounded with the partitioning dielectric films 12 and 13 continuing from the surface 10a to the rear 10b are demarcated. By this setup, the wafer 10 can be dielectrically separated into the semiconductor regions 15 and 16 which continue from the surface 10 to the rear of the wafer 10 so as to be suitable for building in vertical circuit elements. |
