| 摘要 |
PURPOSE:To provide a resist patterning method with which the resist swelling inhibition effect in a wafer can be made uniform by improving the resist swelling inhibition effect on the center part of the wafer, and also the progress of developing in the wafer can be made uniform by improving the developing speed on the circumference of the wafer. CONSTITUTION:In a patterning method wherein, after resist has been applied, it is exposed to light, then an intermittent developing operation, in which developing, rising and drying operations are repeatedly conducted, the sensitized resist is developed by a cooled developing solution. |
