| 摘要 |
<p>PURPOSE:To prevent the generation of DC level shift and crosstalk in the case of application to the driving of an LCD panel. CONSTITUTION:The title transistor comprises the following; a transparent insulative substrate 1, a gate electrode 8, a source electrode 3, and a drain electrode 2 which electrodes are arranged on the substrate 1, an operating semiconductor layer 4 which is arranged between the source electrode 3 and the drain electrode 2 via the gate electrode 8 and gate insulating layers 5, 7, a source side semiconductor layer 4a of a conductivity type which is arranged between the operating semiconductor layer 4 and the source electrode 3 and electrically connects both of them, and a drain side semiconductor layer 4b of a conductivity type which is arranged between the operating semiconductor layer 4 and the drain electrode 2 and electrically connects both of them. The impurity concentration of the drain side semiconductor layer 4b of a conductivity type is larger than that of the source side semiconductor layer 4a of a conductivity type.</p> |
