SEMICONDUCTOR DEVICE, AND FIELD-EFFECT TRANSISTOR AND MANUFACTURE THEREOF

摘要

PURPOSE:To provide a thin film transistor whose structure is capable of reducing power consumption during standby time for the application of a thin film transistor as a load cell transistor of CMOS type SRAM memory and stabilizing data holding properties. CONSTITUTION:There is formed a gate electrode 1 which comprises a polycrystalline silicon film on an insulator 1100. A gate insulating film 2 is formed on the gate electrode 1. A polycrystalline silicon film 3 is formed on the gate insulating film 2. There is formed a source/drain region which comprises a low concentration region 6 and a high concentration region on an isolated portion of the polycrystalline silicon film 3 by a channel region.