| 摘要 |
<p>PURPOSE:To improve the accuracy of transfer of a pattern by realizing the uniformity of a high degree of a flatness or configuration in all the area of the material to be exposed in reduction projection-aligning. CONSTITUTION:A vacuum chuck 17, having the size of a suction surface 17a equal to the exposing region 14a of one-time exposing operation in a wafer 14, is arranged opposing to a reduction projection optical system 15 independent of a Y-stage 4 and an X-stage 10 with which the step-and-repeat method is conducted on the wafer 14. When an exposing operation is conducted on the exposing region 14a, the exposing region 14a only is sucked from its rear side by the vacuum chuck 17, the surface of the exposing region 14a is corrected into the shape in conformity with the curvature of image surface of the reduction projection optical system 15, the exposing region 14a is entirely brought into the depth of focal point, and the accuracy of the transfer pattern is improved.</p> |
