| 摘要 |
PURPOSE:To improve the connection between the upper layer wiring and the lower layer wiring by forming a forward taper-shaped through hole on the interlayer insulating film formed on the lower layer wiring. CONSTITUTION:A flattened interlayer insulating film 3 is formed on a lower layer wiring 2. Then, novolac photoresist 4 is applied thereon, exposed and left in an amine gas atmosphere. Subsequently, the whole surface is exposed, and developed by an alkaline developing solution, and an inverted taper-formed resist pattern 4 is obtained. Then, the interlayer insulating film 3 is reactive ion-etched, and an aperture, having forward taper-shaped cross section, is obtained. Then, an upper layer wiring 5 is formed using a sputtering method and a lithographic method, and an element part is completed. The step coverage of the upper layer wiring, which is on the inter-layer insulating film, is improved, the connection resistance of the lower layer wiring is reduced, the unsatisfactory open caused by disconnection is removed, and the yield of production can be improved. |
