| 摘要 |
<p>PURPOSE:To enable a quantum coupled memory to cope with wide needs by a method wherein a first and a second island which are as large in size as a quantum well, capable of trapping electrons, and located in a fault medium and a metal wire which controls the quantity of electricity trapped by the islands are provided. CONSTITUTION:An electrical field induced by electrons trapped by islands 350 and 352 located inside a fault medium is changed in intensity, whereby quantum wells 310 and 312 coupling a quantum coupled ROM can be changed in energy level. Therefore, metal wires 302, 304, and 306 are provided to control the quantity of electrons trapped in the islands 350 and 352, whereby a quantum coupled ROM where the coupling quantum wells 350 and 352 are different from each other in energy level can be formed. By this setup, a quantum coupled ROM of this design can cope with wide needs.</p> |
