| 摘要 |
<p>PURPOSE:To produce the photomask having high accuracy by eliminating the degradation in resolution by conductive films provided in order to prevent charge-up and fluctuations in size. CONSTITUTION:A conductive thin film 8 is formed on a resist thin film 7 by a Langmuir-Blodgett's technique and thereafter patterns are plotted on this film by ionization radiation 9 in the production of the photomask by forming the resist thin film 7 on a light shielding layer 6 formed on a substrate 5, plotting the patterns on the resist thin film 7 by the ionization radiations 9, etching the exposed light shielding layer 6 with such resist patterns as a mask and removing the remaining resist after the end of the etching.</p> |
