| 发明名称 |
Trench dram cell with substrate plate. |
| 摘要 |
<p>Disclosed is a Dynamic Random Access Memory (DRAM) cell which includes a storage capacitor (28, 32, 34) disposed in a trench (28) formed in a semiconductor substrate (24, 30) and an access transistor (12) disposed in a well (18) which is opposite in conductivity type to that of the substrate (24, 30) and a buried oxide collar (36) which surrounds an upper portion of the trench (28). <IMAGE></p> |
| 申请公布号 |
EP0513532(A1) |
申请公布日期 |
1992.11.19 |
| 申请号 |
EP19920106318 |
申请日期 |
1992.04.11 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BRONNER, GARY B.;DHONG, SAN H.;HWANG, WEI |
| 分类号 |
H01L21/76;H01L21/8242;H01L27/10;H01L27/108 |
主分类号 |
H01L21/76 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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