<p>A method for manufacturing a solar cell which includes at least a first GaAs layer of a first conductivity type and a second GaAs layer of a second conductivity type sequentially formed on a first main surface of an Si substrate of the first conductivity type, a first electrode formed on a second main surface opposite to the first main surface of the Si substrate and a second electrode formed on the second GaAs layer. The method includes a first step of forming a layer comprising a material having a thermal expansion coefficient smaller than that of Si on the second main surface of the Si substrate at a temperature close to the room temperature and a second step of sequentially forming the first and second GaAs layers on the first main surface of the Si substrate. <IMAGE></p>
申请公布号
EP0511718(A3)
申请公布日期
1992.11.19
申请号
EP19920201964
申请日期
1991.04.10
申请人
MITSUBISHI DENKI KABUSHIKI KAISHA;NIPPON TELEGRAPH AND TELEPHONE CORPORATION