Method of producing capacitive element for dram.

摘要

For a process of producing a capacitive element with a layered electrode, there is proposed a method to avoid that a part of the storage node electrode during the processes is positioned in the air without support therebelow. Storage electrode and ground electrode layers are deposited alternatingly. The storage node electrode layers are contacted by embedding a polysilicon plug (106a) in an aperture which extends to a silicon active layer (102) in a silicon substrate (101) from the surface of a polysilicon capacitive electrode (114aa) that is provided over a first ground electrode layer (104ab). After the capacitive insulating film (105b) and a second polysilicon ground electrode layer (104ba) are formed, the electrode layers (104aa,104ba) are electrically connected by a polysilicon plug (106d) to form a cell plate electrode. <IMAGE>