Target mfr. for a sputtering device - by plasma-spraying a metal, alloy or cpd. on to a target substrate

摘要

The target material is applied to a target substrate, particularly to a tubular target substrate, by plasma spraying. A predetermined target stoichiometry can be produced, for subsequent reactive sputtering. The plasma spraying process is controlled so that a residual conductivity is produced which is sufficient for subsequent DC magnetron sputtering. The target starting material is an alloy or a cpd. most pref. indium-tin oxide or tin-doped indium oxide (ITO); Ag; TiN; Si or Si alloys. USE/ADVANTAGE - Used for mfg. a target, particulary a rotating target in the form of a tubular target for a sputtering device which is pref. equipped with a magnetron cathode. Compared with existing processes for the mfr. of sputtering targets, the process is associated with a low prodn. cost, and is suitable for the mfr. of targets for complex sputtering processes, including complex reactive sputtering. The plasma spraying process improves the target by producing a predetermined grain size and density distribution.