High-speed film-forming processes by plasma CVD and Radical CVD under high pressure.

摘要

High-speed film-forming processes by plasma CVD and radical CVD under a high pressure which enable high-speed film forming without few restrictions on a substrate and polycrystallization or crystallization of a thin film merely by heating the substrate to a temperature which does not cause thermal damage on the substrate. The long-life neutral radicals of an inert gas are generated by excitation of plasma or light under a high pressure such as several Torr to several atm, and the neutral radicals are reacted with reaction gas molecules so as to decompose or activate reaction nuclei. The neutral radicals of the reaction gas generated thereby are introduced onto the substrate, thereby forming a thin film thereon. <IMAGE>