| 摘要 |
PURPOSE:To ensure improvement of the electrical reliability and high density integration of a semiconductor device. CONSTITUTION:In a semiconductor device having a stacked type capacitive element C, an end surface of part of the surrounidngs of a lower electrode 13 is provided within a range from an opening 12 end provided in a lower insulating film 11 for connection of the lower electrode 13 to a distance corresponding to the thickness of a conductive film constituting the lower electrode 13. Since the area of the end surface of the part of the surroundings of the lower electrode 13 is increased corresponding to the thickness of the insulating film 11, there can be increased the amount of stored electric charges on the capacitive element C at a same flat plane layout area. |
