摘要 |
PURPOSE:To enable highly accurate detection of a defect by horizontally/ vertically scanning the same position pattern between chips by the same electron beam to have it detected directly. CONSTITUTION:A chip on a mask 3 to be inspected is horizontally/vertically scanned 2 by an electron beam generated by an electron gun 1, and a signal corresponding to its pattern shape is detected 5. The signal is processed in a binary circuit 6 and an edge number counting part 7 to be stored 9. Data wherein pattern of another chip of the mask 3 or the same region on another mask to be inspected is moved by a sample stage moving part 10 and scanned is compared in a comparison determination part 8 so that different portions are extracted. At this time based on the pattern position of one chip as reference, the pattern position, rotation and pattern length of the other chip is compensated by compensation parts 40,41 of rotation and pattern position detection, so that pseudo defects due to lithographic errors are eliminated thereby allowing highly accurate position alignment over an entire chip region. |