发明名称 |
Instrument and method for 3-dimensional atomic arrangement observation. |
摘要 |
<p>3-dimensional observation is carried out on the atomic arrangement and atomic species in a thin-film specimen at an atomic level in order to clarify the existence states of defects and impure atoms in the crystals. For that purposes, an instrument and a method for 3-dimensional observation of an atomic arrangement are implemented by a system comprising a scanning transmission electron microscope equipped with a field emission electron gun (8) operated at an acceleration voltage of greater than 200 kV, a specimen goniometer/tilting system (12) having a control capability of the nanometer order, a multi-channel electron detector (13) and a computer (14) for executing software for controlling these components and 3-dimensional image-processing software. Point defects and impure atoms, which exist in joint interfaces and contacts in a ULSI device, can thereby be observed. As a result, the causes of bad devices such as current leak and poor voltage resistance can be analyzed at high accuracy. <IMAGE></p> |
申请公布号 |
EP0513776(A2) |
申请公布日期 |
1992.11.19 |
申请号 |
EP19920108109 |
申请日期 |
1992.05.13 |
申请人 |
HITACHI, LTD. |
发明人 |
KAKIBAYASHI, HIROSHI;MITSUI, YASUHIRO;TODOKORO, HIDEO;KURODA, KATSUHIRO |
分类号 |
H01J37/20;G01N23/04;G01Q30/02;G01Q60/10;G01Q80/00;G01R31/305;H01J37/22;H01J37/244;H01J37/28 |
主分类号 |
H01J37/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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